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 RClamp2504P & RClamp3304P
PROTECTION PRODUCTS - RailClamp(R) Description
RailClamp(R) is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The monolithic design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. Each line has a maximum capacitance of < 0.8pF to ground. The capacitance of each line is well matched for consistant signal balance. This device is optimized for ESD protection of portable electronics. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (15kV air, 8kV contact discharge). The RClampTM2504P and RClampTM3304P are constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage current and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 2.5 volts and 3.3 volts for superior protection. These devices are in a 6-pin, RoHS/WEEE compliant, SLP1616P6 package measuring 1.6 x 1.6 x 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu.
RailClamp(R) 2.5V & 3.3V TVS Arrays
Features
Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) Array of surge rated diodes with internal TVS Diode Small package saves board space Protects up to four I/O lines Low capacitance (<0.8pF) for high-speed interfaces Minimal insertion loss to 3.0GHz Low operating voltage: 2.5V and 3.3V Low leakage current and clamping voltage Solid-state silicon-avalanche technology
Mechanical Characteristics
SLP1616P6 package RoHS/WEEE Compliant Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking: Marking Code + Date Code Packaging: Tape and Reel
Applications
Multi Media Card (MMC) Interfaces SATA Interfaces SD Card Interfaces SIM Ports MDDI Ports MPPI Ports
Circuit Diagram
Pin Configuration
1.6
1
3
6
1.6
1 2 5 6
0.5 0.58
GND
SLP1616P6 (Bottom View) Nominal Dimensions in mm
Revision 01/15/2008 1 www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Absolute Maximum Rating
R ating Peak Pulse Power (tp = 8/20s) Peak Pulse Current (tp = 8/20s) ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k IP P VESD TJ TSTG Value 80 5 20 12 -40 to +85 -55 to +150 Units Watts A kV C C
Electrical Characteristics (T=25oC)
R Clamp2504P Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V PT VSB IR VC VC Cj Conditions Pin 3 to GN D IPT = 2A ISB = 50mA VRWM = 2.5V, T=25C IPP = 1A, tp = 8/20s IPP = 5A, tp = 8/20s VR = 0V, f = 1MHz Any I/O p in to GN D VR = 0V, f = 1MHz Between I/O p ins 0.4 2.7 2.0 0.5 6.5 13 0.8 Minimum Typical Maximum 2.5 Units V V V A V V pF pF
(c) 2008 Semtech Corp.
2
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS
R Clamp3304P Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V PT VSB IR VC VC Cj Conditions Pin 3 to GN D IPT = 2A ISB = 50mA VRWM = 3.3V, T=25C IPP = 1A, tp = 8/20s Any I/O GN D IPP = 5A, tp = 8/20s Any I/O to GN D VR = 0V, f = 1MHz Any I/O p in to GN D VR = 0V, f = 1MHz Between I/O p ins 0.4 3.5 2.8 0.5 7.5 16 0.8 Minimum Typical Maximum 3.3 Units V V V A V V pF pF
(c) 2008 Semtech Corp.
3
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
110 100 90 80 70 60 50 40 30 20 10 0
Power Derating Curve
Peak Pulse Power - PPP (kW)
1
0.1
0.01 0.1 1 10 Pulse Duration - tp (us) 100 1000
% of Rated Power or IPP
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Waveform
110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 Time (s) 20 25 30 td = IPP/2
PP
Normalized Capacitance vs. Reverse Voltage
Waveform Parameters: tr = 8s td = 20s
1.2
1
Percent of I
e-t
CJ(VR) / CJ(VR=0)
0.8
0.6
0.4
0.2
f = 1 MHz
0 0 0.5 1 1.5 2 2.5 3 3.5 Reverse Voltage - VR (V)
Clamping Voltage vs. Peak Pulse Current I/O to GND
15
RClamp3304P
Clamping Voltage vs. Peak Pulse Current I/O to I/O
20
Clamping Voltage - VC (V)
Clamping Voltage - VC (V)
RClamp3304P
15
10
RClamp2504P
10
RClamp2504P
5
Waveform Parameters: tr = 8s td = 20s
5
Waveform Parameters: tr = 8s td = 20s
0 0 1 2 3 4 5 6 Peak Pulse Current - IPP (A)
0 0 1 2 3 4 5 6 Peak Pulse Current - IPP (A)
(c) 2008 Semtech Corp.
4
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Typical Characteristics
Insertion Loss S21 (I/O to Gnd)
CH1 S21 CH1 S21 LOG 6 dB / REF 0 dB 1: -.2624 dB 900 MHz
4
Analog Crosstalk
LOG 20 dB / REF 0 dB
0 dB
2 3
2: -.1344 dB 1.8 GHz 3: -.0603 dB 2.5 GHz
-6 dB -12 dB -18 dB -24 dB -30 dB -36 dB
10 MHz START. 030 MHz
100 MHz
3 1 GHz GHz . STOP 3000 000000 MHz START. 030 MHz . STOP 3000 000000 MHz
ESD Clamping (8kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
(c) 2008 Semtech Corp.
5
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Applications Information
Device Connection for Protection of Four High-Speed Data Lines These devices are designed to protect low voltage data lines operating at 2.5 volts or 3.3 volts. When the voltage on the protected line exceeds the TVS working voltage, the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry, through the internal TVS to ground. Data lines are connected at pins 1, 2, 5 and 6. The center pin should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. For best results, multiple micro-vias connected to ground are recommended. Pins 3 and 4 are not connected. Note that pin 3 is connected internally to the cathode of the low voltage TVS. It is not recommended that this pins be directly connected to a DC source greater than the snap-back votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics These devices are constructed using Semtech's proprietary EPD technology. By utilizing the EPD technology, the device can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristics due to its structure. This point is defined on the curve by the snap-back voltage (VSB)
(c) 2008 Semtech Corp. 6
1. Configuration (Top View) Figure 1 . Pin Conf iguration (Top Side Vie w)
1 2 3
6
Gnd
5 4
Pin 1, 2, 5, 6 4 3 Center Tab
Ide ntificatio n Inp ut/Outp ut Lines N ot Connected 2.5V or 3.3V (Do not connect this p in to a DC sup p ly) greater than VSB) Ground
Protection of Four Data Lines
1
Gnd
and snap-back current (ISB). To return to a nonconducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state.
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Typical Applications
Gnd
1
SIM Port - Protection of Three Data Lines and VCC
(c) 2008 Semtech Corp.
7
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Applications Information - Spice Model
RClamp2504P Spice Model
R Clamp2504P Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (LCR D) 1E-20 100 0.7 0.456 1E-3 0.3E-12 2.541E-9 0.01 1.1 1.11 D2 (LCR D) 1E-20 100 0.7 0.714 1E-3 0.3E-12 2.541E-9 0.01 1.1 1.11 D3 (T VS) 2.19E-12 2.88 0.6 0.195 1E-3 63E-12 2.541E-9 0.16 1.1 1.11
(c) 2008 Semtech Corp.
8
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Applications Information - Spice Model
RClamp3304P Spice Model
R Clamp3304P Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (LCR D) 1E-20 100 0.70 0.456 1E-3 0.3E-12 2.541E-9 0.01 1.1 1.11 D2 (LCR D) 1E-20 100 0.70 0.714 1E-3 0.3E-12 2.541E-9 0.01 1.1 1.11 D3 (T VS) 2.19E-12 3.3 0.62 0.36 1E-3 73E-12 2.541E-9 0.18 1.1 1.11
(c) 2008 Semtech Corp.
9
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Outline Drawing - SLP1616P6
A D B
PIN 1 INDICATOR (LASER MARK)
E
DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX
A A1 A2 b D D1 E E1 e L N aaa bbb .020 .023 .026 0.00 .001 .002 (.006) .007 .010 .012 .059 .063 .067 .041 .047 .051 .059 .063 .067 .016 .022 .026 .020 BSC .013 .013 .016 6 .004 .004 0.50 0.58 0.65 0.00 0.03 0.05 (0.15) 0.20 0.25 0.30 1.50 1.60 1.70 1.05 1.20 1.30 1.50 1.60 1.70 0.40 0.55 0.65 0.50 BSC 0.25 0.33 0.40 6 0.09 0.09
A aaa C A2 D1 12 LxN E1 N bxN e D/2 bbb E/2 A1 C
SEATING PLANE
CAB
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
Land Pattern - SLP1616P6
P X
DIMENSIONS DIM B C P F G X Y Z INCHES .051 .060 .020 .018 .035 .012 .025 .085 MILLIMETERS 1.30 1.52 0.50 0.45 0.89 0.30 0.63 2.15
Z
G
F
(C)
Y B
NOTES:
1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET
(c) 2008 Semtech Corp.
10
www.semtech.com
RClamp2504P & RClamp3304P
PROTECTION PRODUCTS Marking Ordering Information
Part Number Working Voltage 2.5 Volts 3.3 Volts Qty per Reel 3,000 3,000 R eel Size 7 Inch 7 Inch
2504P YW
RClamp2504P YW = Date Code
3304P YW
RClamp3304P
RClamp2504P.TCT RClamp3304P.TCT
RailClamp and RClamp are marks of Semtech Corporation
Tape and Reel Specification
Device Orientation in Tape (Pin 1 upper left towards sprocket holes)
A0 1.78 +/-0.10 mm
B0 1.78 +/-0.10 mm
K0 0.69 +/-0.10 mm
Tape Width
B, (Max)
D
D1
E
F
K (MAX)
P
P0
P2
T(MAX)
W 8.0 mm + 0.3 mm - 0.1 mm
8 mm
4.2 mm
1.5 + 0.1 mm - 0.0 mm )
0.5 mm 0.05
1.750.10 mm
3.50.05 mm
2.4 mm
4.00.1 mm
4.00.1 mm
2.00.05 mm
0.4 mm
Contact Information
Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
(c) 2008 Semtech Corp. 11 www.semtech.com


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